2D Silicon Hall Microsensor

A 2D silicon Hall microsensor measuring simultaneously and independently two magnetic field components is realized and tested. The first component is in the plane and the other one is orthogonal to this plane. On the upper side of ntype substrate a deep rectangular pring with dimensions 50 х 150 μm and depth 10 μm is realized. In the surrounded by the pring nregion, near to one of its short sides and parallel to it, two ohmic contacts are formed. On the opposite side of the nzone there is a third ohmic contact. In the middle part of the rectangular nregion two equal ohmic contacts parallel to the long sides of the ring also exist. The two contacts on wide side of the ring via respective load resistors and supply are fed with the third ohmic contact. The channel outputs for the two magnetic components are the two contacts connected to the resistors and the electrode parallel to the long side of the ring respectively. The 2D Hall microsensor is working as at T = 300K and T = 77 K.