Two-Component Magnetosensitive Sensor

A silicon microsensor measuring simultaneously and independently the two inplane components of the magnetic field is experimentally tested. The structure characterizes with a central ohmic contact and symmetrically to him two perpendicular to each other ohmic contacts. The bottom side of the chip is ohmic contact too. The supply current flows through the central contact and bottom of the chip. Output voltages are generated on the perpendicular couple contacts due to the Hall effect and in arbitrary direction of the magnetic field. The silicon substrate serves as an active transducer zone. The magnetosensitivities of the two sensor channels are equal reaching S = 25 АТ at Т = 300 К and S = 120 AT at T = 77 K. The channel crosssensitivity do not exceeds 5 % as the internal noise is f type. The simplified device design and the performance of this 2D microsensor are especially suitable in systems engineering and bioengineering too.